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| RK7002A Transistors Switching (60V, 300mA) RK7002A !Features 1) Low on-resistance. 2) High ESD 3) High-speed switching. 4) Low-voltage drive (4V). 5) Easily designed drive circuits. 6) Easy to use in parallel. !External dimensions (Units : mm) 0.95 0.95 0.15 (3) (2) (1) 0.4 1.3 2.4 0.95 !Structure Silicon N-channel MOSFET transistor 0.45 0~0.1 0.2Min. Each lead has same dimensions 1.9 2.9 ROHM : SST3 EIAJ : SOT-23 Abbreviated symbol : RKS (1) Source (2) Gate (3) Drain !Equivalent circuit (3) (2) Gate Protection Diode. (1) A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. !Absolute maximum ratings (Ta=25C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Continuous Drain reverse current Pulsed Symbol VDSS VGSS ID IDP1 IDR IDRP1 PD2 Tch Tstg Limits 60 20 300 1.2 300 1.2 200 150 -55~+150 Unit V V mA A mA A mW C C Total power dissipation Channel temperature Storage temperature 1 Pw10s, Duty cycle1% 2 When using 1x0.75x0.062 inch glass epoxy board. RK7002A Transistors !Electrical characteristics (Ta=25C) Parameter Gate leakage current Drain-source breakdown voltage Drain cutoff current Gate threshold voltage Symbol IGSS V (BR) DSS IDSS VGS (th) Min. - 60 - 1 - - 200 - - - - - - - - - - Typ. - - - - 0.7 1.1 - 33 14 9 6 5 13 80 3 0.6 0.5 Max. 10 - 1 2.5 1.0 1.5 - - - - - - - - 6 - - Unit A V A V mS pF pF pF ns ns ns ns nC nC nC Test Conditions VGS=20V, VDS=0V ID=10A, VGS=0V VDS=60V, VGS=0V VDS=10V, ID=1mA ID=300mA, VGS=10V ID=300mA, VGS=4V VDS=10V, ID=300mA VDS=10V VGS=0V f=1MHz ID=150mA, VDD 30V VGS=10V RL=200 RGS=10 VDD 30V VGS=10V ID=200mA Drain-source on-state resistance RDS (on)1 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge 1 PW300s, Duty cycle1% 2 Pulsed l Yfs l1 Ciss Coss Crss td (on)2 tr2 td (off)2 tf2 Qg2 Qgs2 Qgd2 !Packaging specifications Package Code Type RK7002A Basic ordering unit (pieces) Taping T116 3000 !Electrical characteristic curves GATE THRESHOLD VOLTAGE : VGS (th) (V) 1.2 10V 6V 1.0 8V 4V 1 VDS=10V Pulsed 2.5 VDS=10V ID=1mA Pulsed 0.8 0.6 0.4 VGS=3V 0.2 0.0 0.0 Ta=25C Pulsed 0.5 1.0 1.5 2.0 2.5 3.0 DRAIN-SOURCE VOLTAGE : VDS (V) 3.5V DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) 2.0 0.1 Ta=-25C 25C 75C 125C 0.01 1.5 1.0 0.5 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 -50 -25 0 25 50 75 100 125 150 GATE-SOURCE VOLTAGE : VGS (V) CHANNEL TEMPERATURE : Tch (C) Fig.1 Typical output characteristics Fig.2 Typical transfer characteristics Fig.3 Gate threshold voltage vs. channel temperature RK7002A Transistors 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () VGS=10V Pulsed 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () 7 VGS=4V Pulsed Ta=125C 75C 25C -25C 6 5 4 ID=300mA Ta=25C Pulsed Ta=125C 75C 25C -25C 1.0 1.0 3 150mA 2 1 0 0.1 0.01 0.1 DRAIN CURRENT : ID (A) 1.0 0.1 0.01 0.1 DRAIN CURRENT : ID (A) 1.0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static drain-source on-state resistance vs. drain current ( ) Fig.5 Static drain-source on-state resistance vs. drain current ( ) Fig.6 Static drain-source on-state resistance vs. gate-source voltage 2.0 1 REVERSE DRAIN CURRENT : IDR (A) VGS=10V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) () REVERSE DRAIN CURRENT : IDR (A) VGS=0V Pulsed 10 Ta=25C Pulsed 1.5 1 VGS=10V 0.1 Ta=125C 75C 25C -25C 0.01 1.0 ID=300mA 150mA 0.1 0V 0.5 0.01 0.0 -50 -25 0 25 50 75 100 125 150 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 CHANNEL TEMPERATURE : Tch (C) SOURCE-DRAIN VOLTAGE : VSD (V) SOURCE-DRAIN VOLTAGE : VSD (V) Fig.7 Static drain-source on-state resistance vs. channel temperature Fig.8 Reverse drain current vs. source-drain voltage ( ) Fig.9 Reverse drain current vs. source-drain voltage ( ) FORWARD TRANSFER ADMITTANCE : |Yfs| (S) 1 100 1000 CAPACITANCE : C (pF) 0.1 Ta=-25C 25C Ta=75C 125C Ciss SWITCHING TIME : t (ns) tf 100 td (off) Ta=25C VDD=30V VGS=10V RG=10 Pulsed 10 Crss Coss 0.01 10 td (on) tr 0.001 0.001 VGS=10V Pulsed 0.01 0.1 1 DRAIN CURRENT : ID (A) Ta=25C f=1MHz VGS=0V 1 0.01 0.1 1 10 100 1 1 10 100 1000 DRAIN-SOURCE VOLTAGE : VDS (V) DRAIN CURRENT : ID (A) Fig.10 Forward transfer admittance vs. drain current Fig.11 Typical capacitance vs. drain-source voltage Fig.12 Switching characteristics (See Figures 13 and 14 for the measurement circuit and resultant waveforms) RK7002A Transistors !Switching characteristics measurement circuit Pulse width 50% 10% 10% 90% 50% VGS ID D.U.T. RL VDS VGS VDS RG 10% 90% 90% td (off) tf toff VDD td (on) ton tr Fig.13 Switching time measurement circuit Fig.14 Switching time waveforms Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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